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dgt409bca reverse blocking gate turn-off thyristor ds4414-4.2 december 2007 (ln25790) 1/11 www.dynexsemi.com applications the dgt409bca is a symmetrical gto designed for applications, which specifically require a reve rse blocking capability, such as current source inverte r (csi). reverse recovery ratings and characteristics are included. features reverse blocking capability double side cooling high reliability in service high voltage capability fault protection without fuses turn-off capability allows reduction in equipment size and weight. low noise emission reduces acoustic cladding necessary for environmental requirements ordering information order as: dgt409bca6565 key parameters i tcm 1500a v drm /v rrm 6500v dv d /dt 1000v/s di t /dt 300a/s outline type code: ca (see package details for further information) fig. 1 package outline
semiconductor dgt409bca 2/11 www.dynexsemi.com voltage ratings type number repetitive peak off-state voltage v drm (v) repetitive peak reverse voltage v rrm (v) conditions dgt409bca 6500 6500 t vj = 115c, i dm =, i rrm = 100ma current ratings symbol parameter conditions max. units i tcm repetitive peak controllable on-state current v d = 4300v, t j = 115c, di gq /dt = 20a/ s, c s = 2 f 1500 a surge ratings symbol parameter test conditions max. units i tsm surge (non repetitive) on-state current 10ms half si ne. t j = 115c 3.0 ka i 2 t i 2 t for fusing 10ms half sine. t j = 115c 45 ka 2 s di t /dt critical rate of rise of on-state current v d = 3000v, i t = 800a, t j = 115c, i fg > 20a, rise time (t r ) > 1.5 s 300 a/ s v d = 3000v; r gk 1.5 , t j = 115c 175 v/ s dv d /dt rate of rise of off-state voltage v d = 3000v; v rg -2v, t j = 115c 1000 v/ s l s peak stray inductance in snubber circuit i t = 1500a, v dm = 6000v, tj = 115 o c, di gq = 20a/us, c s = 2.0uf 200 nh gate ratings symbol parameter test conditions min. max. units v rgm peak reverse gate voltage this value may exceeded du ring turn-off - 25 v i fgm peak forward gate current 20 70 a p fg(av) average forward gate power - 10 w p rgm peak reverse gate power - 15 kw di gq /dt rate of rise of reverse gate current 15 60 a/ s t on(min) minimum permissible on time 50 - s t off(min) minimum permissible off time 150 - s i rgm continuous reverse gate-cathode current v rgm = 16v, no gate cathode resistor - 50 ma
semiconductor dgt409bca 3/11 www.dynexsemi.com thermal and mechanical ratings symbol parameter test conditions min. max. units double side cooled dc - 0.046 c/w anode dc - 0.073 c/w r th(j-hs) thermal resistance ? junction to heatsink surface single side cooled cathode dc - 0.124 c/w r th(c-hs) contact thermal resistance clamping force 32.0kn with mounting compound per contact - 0.009 c/w t vj virtual junction temperature on-state (conducting) - 1 15 c t op /t stg operating junction/storage temperature range -40 115 c f m clamping force 11.0 15.0 kn characteristics tj =115 o c unless stated otherwise symbol parameter test conditions min. max. units v tm) on-state voltage at 200a peak, i g(on) = 4a d.c. - 4 v i dm peak off-state current v drm = 6500v, v rg = 0v - 100 ma i rrm peak reverse current v rrm = 6500v - 100 ma v gt gate trigger voltage v d = 24v, i t = 100a, tj = 25 o c - 1 v i gt gate trigger current v d = 24v, i t = 100a, tj = 25 o c - 2 a i rgm reverse gate cathode current v rgm = 16v, no gate/cathode resistor - 50 ma e on turn-on energy - 2500 mj t d delay time - 3 s t r rise time v d = 3000v i t = 400a, di t /dt = 150a/s i fg = 20a, rise time (t r ) < 1.5s - 7 s e off turn-off energy - 2500 mj t gs storage time s t gf fall time s t gq gate controlled turn-off time see fig.17 and fig.18 s q gq turn-off gate charge - 3600 c q gqt total turn-off gate charge - 7200 c i gqm peak reverse gate current i t = 800a, v dm = 3000v snubber cap cs = 2c di gq /dt = 20a/us - 350 a
semiconductor dgt409bca 4/11 www.dynexsemi.com anodevoltageandcurrent v d 0.9xv d 0.1xv d t d t r t gt i t v dp 0.9xi t i tai l dv d /dt v d v dm gatevoltageandcurrent t gs t gf t w1 v fg i fg 0.1xi fg di fg /dt 0.1xi gq q gq 0.5xi gqm i gqm v rg v (rg)br i g(on) t gq recommendedgateconditionstoswitchoffi tcm =800a: i fg =30a i g(on) =4ad.c. t w1(min) =20s i gqm =270atypical di gq /dt=30a/s q gq =2200c v rg(min) =2v v rg(max) =15v thesearerecommendeddynexsemiconductorconditions.otherconditionsarepermitted accordingtousersgatedrivespecifications. fig.2 general switching waveforms
semiconductor dgt409bca 5/11 www.dynexsemi.com curves 15s i rr q s i t v r fig.3 reverse recovery waveforms 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 50 25 0 25 50 75 100 125 150 junctiontemperature,t j (c) gatetriggervoltage,v gt (v) 0 0.4 0.8 1.2 1.4 2.0 2.4 2.8 3.2 3.6 4.0 gatetriggercurrent,i gt (a) i gt v gt 0 100 200 300 400 500 600 700 800 900 1000 0 1 2 3 4 5 6 7 8 instantaneousonstatevoltage,v t (v) instantaneousonstatecurrent,i t (a) t j =115c t j =25c fig.4 maximum gate trigger voltage/current vs junct ion temperature fig.5 maximum on-state characteristics
semiconductor dgt409bca 6/11 www.dynexsemi.com 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 0.2 0.4 0.6 0.8 1.0 1.4 1.2 1.6 1.8 2.0 snubbercapacitance,c s (f) maximumpermissibleturnoffcurrent,i tcm (ka) conditions:t j =115c, v dm =4300v, di gq /dt=20a/s 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 20 40 60 80 100 140 120 160 180 200 rateoffallofanodecurrent,di/dt(a/s) reverserecoveryenergyperpulse,e off (j) conditions:t c =100c, v r =3500v i t =150a i t =300a fig.6 maximum dependence of i tcm on c s fig.7 maximum reverse recovery energy vs rate of fa ll of anode current 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 0 20 40 60 80 100 140 120 160 180 200 rateoffallofanodecurrent,di/dt(a/s) reverserecoverystoredcharge,q s (c) conditions:t c =100c, v r =3500v i t =150a i t =300a 300 350 400 450 500 550 600 650 700 750 800 0 20 40 60 80 100 140 120 160 180 200 rateoffallofanodecurrent,di/dt(a/s) peakreverserecoverycurrent,i rr (a) conditions:t c =100c, v r =3500v i t =150a i t =300a fig.8 maximum reverse recovery charge vs rate of fa ll of anode current fig.9 maximum reverse recovery current vs rate of f all of anode current
semiconductor dgt409bca 7/11 www.dynexsemi.com 500 700 900 11 00 1300 1500 1700 1900 2100 2300 2500 0 20 40 60 80 100 140 120 160 180 200 rateoffallofanodecurrent,di/dt(a/s) peakreverserecoverypower,p pk (kw) conditions:t c =100c, v r =3500v i t =150a i t =300a 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 0 100 200 300 400 500 600 700 800 onstatecurrent,i t (a) tur nonenergyloss,e on (mj) conditions:t j =115c,i fg =20a, c s =2f,r s =20, di t /dt=150a/s, di fg /dt=30a/s v d =4500v v d =3000v v d =1500v fig.10 maximum reverse recovery power vs rate of fa ll of anode current fig.11turn-on energy vs on-state current 0 500 1000 1500 2000 2500 3000 3500 4000 0 10 20 30 40 50 60 peakforwardgatecurrent,i fgm (a) tur nonenergyloss,e on (mj) conditions:t j =115c,i t =400a, c s =2f,r s =20, di t /dt=150a/s, di fg /dt=30a/s v d =4500v v d =3000v v d =1500v 0 1 2 3 4 5 6 7 8 0 100 200 300 400 500 600 700 onstatecurrent,i t (a) switchingtime,(s) conditions:t j =115c,i fg =20a, c s =2f,r s =10, v d =3000v,di t /dt=150a/s di fg /dt=30a/s t r t d fig.12 turn-on energy vs peak forward gate current f ig.13 delay time and rise time vs on-state current
semiconductor dgt409bca 8/11 www.dynexsemi.com 0 1 2 3 4 5 6 7 8 9 0 10 20 30 40 50 60 peakforwardgatecurrent,i fgm (a) switchingtime(s) conditions:t j =115c,i t =400a, c s =2f,r s =20, di t /dt=150a/s, di fg /dt=30a/s, v d =3000v risetimet r delaytimet d 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 200 400 600 800 1000 1200 1400 1600 onstatecurrent,i t (a) tur noffenergylosses,e o ff (mj) conditions:t j =115c,r s =20, di gg /dt=20a/s,c s =2f v d =4500v,c s =2f v d =3000v,c s =2f v d =1500v,c s =2f v d =4500v,c s =0.5f fig.14 switching times vs peak forward gate current fig.15 maximum turn-off energy vs on-state current 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 10 20 30 40 50 60 rateofriseofreversegatecurrent,di gq /dt(a/s) tur noffenergyloss,e o ff (mj) conditions:t j =115c,r s =10, i t =800a,c s =2f v d =4500v v d =3000v v d =1500v 0 2 4 6 8 10 12 14 16 18 0 100 200 300 400 500 600 700 800 onstatecurrent,i t (a) gatestoragetime,t gs (s) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 gatefalltime,t gf (s) conditions:t j =115c,c s =2f, r s =20,di gq /dt=20a/s v dm =3000v t gs t gf fig.16 turn-off energy vs rate of rise of reverse g ate current fig.17 gate storage time and fall time vs on-state current
semiconductor dgt409bca 9/11 www.dynexsemi.com 0 2 4 6 8 1210 14 16 18 20 22 24 26 28 30 0 10 20 30 40 50 60 70 80 rateofriseofreversegatecurrent,di gq /dt(a/s) gatestoragetime,t gs (s) 0 1.0 0.80.6 0.4 0.2 2.0 1.81.6 1.4 1.2 3.0 2.82.6 2.4 2.2 gatefalltime,t gf (s) conditions:t j =115c,c s =2f, r s =10,i t =800a, v dm =3000v t gs t gf 0.0001 0.001 0.01 0.1 0.001 0.01 1 0.1 10 100 tim e(s) tra nsientthermalimpedance,z th(jc) (c/kw) dc fig.18 gate storage time and fall time vs rate of r ise of reverse gate current fig.19 maximum (limit) transient thermal impedance ? double side cooled
semiconductor dgt409bca 10/11 www.dynexsemi.com package details for further package information, please contact cus tomer services. all dimensions in mm, unless state d otherwise. do not scale. 20 gate ?38 nom ?56.0 max ?63 nom cathode anode 37.16-36.82 29.5 nom 2 holes ?3.6 0.1 x 1.95 0.05 deep (in both electrodes) ?38 nom ?51 nom auxiliary cathode nominal weight: 350g clamping force: 12kn 10% lead length: 505mm package outine type code: ca fig.20 package outline
semiconductor dgt409bca 11/11 www.dynexsemi.com power assembly capability the power assembly group was set up to provide a su pport service for those customers requiring more th an the basic semiconductor, and has developed a flexible range o f heatsink and clamping systems in line with advanc es in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid coole d assemblies covering the full range of circuit des igns in general use today. the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power as sembly complete solution (pacs). heatsinks the power assembly group has its own proprietary ra nge of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cool ing (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. stresses above those listed in this data sheet may cause permanent damage to the device. in extreme c onditions, as with all semiconductors, this may include potentially hazard ous rupture of the package. appropriate safety pre cautions should always be followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com headquarters operations customer service dynex semiconductor ltd tel: +44(0)1522 502753 / 502901. fax: +44(0)1522 50 0020 doddington road, lincoln lincolnshire, ln6 3lf. united kingdom. tel: +44(0)1522 500500 fax: +44(0)1522 500550 dynex semiconductor 2003 technical documentation ? not for resale. produced in united kingdom. this publication is issued to provide information only wh ich (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form pa rt of any order or contract nor to be regarded as a representation relatin g to the products or services concerned. no warranty or gu arantee express or implied is made regarding the capab ility, performance or suitability of any product or service. the company reserv es the right to alter without prior notice the specif ication, design or price of any product or service. inf ormation concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user?s responsibility to fully determine the performance and suitability of any e quipment using such information and to ensure that any p ublication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant inj ury or death to the user. all products and materials ar e sold and services provided subject to the company?s conditions of sale, which are ava ilable on request. all brand names and product names used in this publicatio n are trademarks, registered trademarks or trade names of their respective owners.

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